InAs/InGaAsN quantum dots emitting at 1.55 micron grown by molecular beam epitaxy

InAs/InGaAsN quantum dots have been grown by molecular beam epitaxy on GaAs substrates. Room temperature photoluminescence (PL) at 1.55 micron has been demonstrated whose intensity was comparable to that of the InGaAsN/GaAs quantum wells emitting at 1.3 micron. The effect of nitrogen concentration on the PL peak position and intensity has been studied.