Customized nanostructures MBE growth: from quantum dots to quantum rings

Studies for growing control methods of quantum dots (QD) sizes and dot/cap intermixing for tuning QD optical properties have particular interest nowadays. Morphological shape surface changes of QD due to thin capping overgrowth of GaAs under different growing conditions has been reported by different authors [1, 2] as a powerful technique to obtain different nanostructures. In this work, control over shape and optical emission of molecular beam epitaxy (MBE) thin capping overgrown InAs QD on GaAs[100] have been studied, using ex-situ Atomic Force Microscopy (AFM) and Photoluminescence (PL).