Role of annealing process on formation of self-organized InGaAs quantum wires on GaAs [100]

Recently, it has been reported that self-organized InGaAs quantum wires (QWRs) can be formed on GaAs [100] by molecular beam epitaxy (MBE). Although the formation mechanism was mainly attributed to elongated QD formation by high temperature growth in a superlattice (SL) structure, the detailed formation mechanism was still unclear. In this study, we found that annealing is the crucial process for the formation of QWRs in addition to SL growth.