Surfactant enhanced growth of GaNAs and InGaNAs using a Bi flux

InGaNAs containing a dilute amount of nitrogen is a promising new material for fabricating optoelectronic devices in the 1.3 - 1.55 /spl mu/m wavelength range on GaAs substrates, in particular as the active material for vertical cavity surface emitting lasers. Recent edge-emitting InGaNAs lasers have demonstrated an improvement in both threshold currents and characteristic temperatures over those of an InP based reference laser. A flux of bismuth was applied during the growth of InGaNAs quantum wells and bulk GaNAs layers by elemental source MBE.