Valence band structure of GaAsN compounds and band-edge line-up in GaAs/GaAsN/InGaAs heterostructures

We report on the fundamental properties of GaAsN compounds and GaAs/GaAsN/In GaAs heterostructures grown by MBE. The strain-induced splitting of light-hole and heavy-hole bands of tensile strained GaAsN is observed. The space-indirect transition between hole localized in InGaAs and electron localized in GaAsN is detected. The evaluation of the dependence of band gap energy for GaAsN on nitrogen content and band-edge line-up in heterostuctures with GaAsN layer was done from experimental data.