Compliant epitaxial growth of In/sub x/Ga/sub 1-x/As on In/sub 0.25/Ga/sub 0.75/As pseudo-substrates

In this study, a pseudo-substrate is formed using lateral oxidation of an underlying Al/sub 0.98/Ga/sub 0.02/As layer to improve the material quality of a relaxed In/sub 0.25/Ga/sub 0.75/As seeding layer. Photoluminescence measurements, Hall-effect measurements, and cross-sectional transmission electron microscopy (TEM) were used to evaluate the quality of the regrown materials.