Molecular beam epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As p-channel field-effect transistors on

P-channel and n-channel heterostructure field effect transistors (HFETs) have been simultaneously fabricated by one-step molecular beam epitaxial growth of Si-doped Al/sub 0.2/Ga/sub 0.8/As/GaAs heterostructures on patterned