Ion implantation impurity profiles in HfO/sub 2/

We implanted B, As, and P ions in a 110-nm-thick layer of HfO/sub 2/ and extracted the parameters of a Pearson IV function. The projected range of the ion implantation was about half of that in SiO/sub 2/. Thus, when impurities were ion implanted in an Si substrate through a thin layer of HfO/sub 2/ or SiO/sub 2/, a smaller dose was retained in the substrate in the former than in the latter case. This effect was demonstrated with P-ion implantation.