Optoelectronic conversion through 850nm band single mode Si/sub 3/N/sub 4/ photonic waveguides for Si-on-chip integration

We have directly coupled Si PIN vertical-junction diode photodetectors and Si/sub 3/N/sub 4/ photonic waveguides on the same horizontal plane of an SOI wafer using a standard Si process. For the stress-free CVD deposition of Si/sub 3/N/sub 4/, the core thickness was set at 200 nm. The single-mode is solved by simulation for the 0.7 /spl mu/m-wide waveguide at a wavelength of 850 nm. Photo-electronic conversion characteristics were examined by introducing a 650 nm and 850 nm laser beam from a rounded-end optical fiber to the on-chip waveguide. Efficient optoelectronic conversion is confirmed through an 850 nm band single mode Si/sub 3/N/sub 4/ photonic waveguide for Si-on-chip integration.