Correlation between interface traps and gate leakage current in ultrathin silicon dioxides

In ultra-thin (20 /spl Aring/) gate oxide, it is observed that gate leakage current increases in discrete steps similar to quasi-breakdown in thicker oxide. A direct correlation is observed between this gate leakage and interface traps when stressed under both positive and negative gate polarity. Using different sample area, it is observed that this gate leakage current is highly localized but has a weak area dependency.