A new observation in hot-carrier induced drain current degradation in deep-sub-micrometer nMOSFETs

Hot-carrier induced drain current degradation in 0.18 /spl mu/m nMOSFETs is investigated. Results show that drain current characterized at drain voltage higher than 0.1 V exhibits the most degradation. This new observation is attributed to two competing mechanisms as the characterization drain voltage increases: reduction in channel inversion charges, and reduction in charged interface states. The characteristic of drain current degradation vs. characterization drain voltage is flatter when the device is stressed under high temperature and forward body-bias.