A 30 V class extremely low on-resistance meshed trench lateral power MOSFET

A meshed trench lateral power MOSFET with a trench bottom source contact (M-TLPM/S) is proposed, fabricated, and characterized. The M-TLPM/S is formed along the sidewalls of the meshed trench. The trench bottom source contact is formed between the drain islands in one direction only (contact area), resulting in increased channel density in reduced cell pitch. The fabricated M-TLPM/S features device pitches in the contact and gate areas of 3.0 /spl mu/m and 1.3 /spl mu/m respectively, and exhibits a specific on-resistance of 8.4 m/spl Omega/-mm/sup 2/ for a breakdown voltage of 31 V.