3 kV 600 A 4H-SiC high temperature diode module

A 3 kV 600 A 4H-SiC high temperature diode module has been developed for use in electricity supply applications, which utilizes a pressure contact flat package type module and includes five 6 mm/spl times/6 mm SiC diode chips. The diode module does not get oxidized in the air even at 500/spl deg/C and has excellent electrical performances at high temperature.