27 m/spl Omega/-cm/sup 2/, 1.6 kV power DiMOSFETs in 4H-SiC

We report on the characteristics of large area (3.3 /spl times/ 3.3 mm/sup 2/) high voltage 4H-SiC DiMOSFETs. The MOSFETs show a peak MOS channel mobility of 22 cm/sup 2//V/spl middot/s and a threshold voltage of 8.5 V at room temperature. The DiMOSFETs exhibit an on-resistance of 27 m/spl Omega//spl middot/cm/sup 2/ at room temperature. The devices block approximately 1.6 kV at room temperature. Stable avalanche characteristics at approximately 2.4 kV are observed on smaller devices. An on-current of 20 A is measured on a 0.103 cm/sup 2/ device. High switching speed is also demonstrated. This suggests that the devices are ideal for high voltage, high frequency, low loss switching applications.