Deposition of Cu barrier and seed layers with atomic layer control

The paper describes the atomic layer chemical vapor deposition (ALCVD/spl trade/) technique for manufacturing the Cu barrier and seed layers. In addition a novel and simple method for the removal of CuO from the bottom of the via is presented. The main emphasis of the paper is on the ALCVD/spl trade/ growth mechanisms and on the compatibility of barrier layer deposition with low-k materials and Cu metal.