Spice compatible electrothermal model of a built-in VDMOSFET diode

An electrothermal model was developed for the built-in VDMOSFET diode. This model calculates the static and dynamic characteristics of the diode by taking into account the heating effect due to the diode's own losses and those of the VDMOSFET. The model's parameters were calculated from the catalog data, known relations from literature and the curve of the measured transient thermal impedance for constant current. The accuracy of the model in a simulation of the temperature dependence of the forward characteristic and the time course of silicon temperature was checked with a MEDICI two-dimensional device simulator.