Spike anneal qualification for 0.13 /spl mu/m USJ technology on Radiance/spl trade/ Centura/spl reg/

This paper characterizes the performance of the Applied Materials 200 mm Radiance/spl trade/ Centura for 0.13 /spl mu/m ultra-shallow junction (USJ) applications. The Radiance spike anneal process is distinguished by fast ramp-up (250/spl deg/C/sec) and cool-down rates (90/spl deg/C/sec). Spike annealing prevents transient enhanced diffusion (TED) and out-diffusion effects of the implant dopant and thus enables good control over USJ formation. The Radiance USJ technology for advanced 0.13 /spl mu/m devices succeeded in achieving a junction sheet resistance <400 ohm/cm/sup 2/ and depth <400/spl Aring/ on PMOS and <250/spl Aring/ on NMOS at 1E18/cm/sup 3/ dopant concentration. The process performance with respect to device requirements and temperature control is presented.