CVD-SiC for RTP chamber components

The CVD manufacturing process, important properties and applications of CVD SILICON CARBIDE/sup /spl reg// in advanced thermal processing of semiconductors are presented. CVD-SiC is produced by the pyrolysis of methyltrichlorosilane, in excess H/sub 2/, in a low-pressure CVD reactor, which produces a theoretically dense, void-free, highly pure, polycrystalline material with high oxidation, thermal shock, and abrasion and corrosion resistance. The mean thermal conductivity for CVD-SiC is about 300 W/mK which is comparable to the best values that metals have exhibited (e.g., copper is 390 W/mK). Details of these data and variation of thermal conductivity with material thickness and growth direction will be presented. The electrical resistivity of CVD-SiC has been tailored in the range of 0.01-1000 ohm-cm by varying the CVD process conditions with minimal effect on the other properties of CVD-SiC. The high thermal conductivity of CVD-SiC along with its other attractive mechanical, thermal, physical and electrical properties makes it a preferred material for fabricating a variety of semiconductor furnace support components.