Quantum simulations of an ultrashort channel single-gated n-MOSFET on SOI

We present quantum mechanical simulations of a single-gated ultrashort channel MOSFET on silicon-on-insulator (SOI). Ballistic transport is assumed, in order to investigate ideal device performance. In particular, the electrical characteristics and the dependence on the SOI body thickness variation and doping of source and drain is elaborated. The results show that excellent performance can be achieved for devices with channel lengths down to 15 nm for a single-gated device layout. The influence of the SOI-film roughness is investigated with an SOI body thickness down to 2.5 nm. Extremely high transconductances far in excess of today's state-of-the-art devices can be expected if the doping level in source and drain is chosen appropriately. We give the relevant design rules for the fabrication of such devices.