Total-dose characterization of a high-performance radiation-hardened 1.0- mu m CMOS sea-of-gates technology

A radiation-hardened CMOS sea-of-gates technology with 1.0- mu m geometry is developed which is fully compatible with commercial technologies. Total-dose and postirradiation effects are investigated in detail on transistors and circuits designed on a 2K-gate test chip. The data show that this technology is radiation hardened up to a total dose of 1 Mrad(SiO/sub 2/) and may be functional at 10 Mrad(SiO/sub 2/). Moreover, using a simple analytic model for switching of CMOS circuits, it is shown that the changes in circuit performance are well correlated with those in transistor characteristics.<
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