A study of the effects of processing on the response of implanted buried oxides to total dose irradiation

For SOI (silicon-on-insulator) materials formed by oxygen implantation (the SIMOX method), the charge trapping properties of the buried oxide layer are of particular interest. The aim is to examine the effects of changing the various SIMOX process parameters on the charge trapping of the buried oxide layer. The buried oxide characteristics were studied directly by high-frequency C-V measurements. The effects of varying the implant oxygen dose and the postimplant anneal temperature and time are studied. In addition, the postirradiation charge trapping is correlated with the preradiation charge densities. A major result is that a large increase in the film donor density with X-ray dose is seen for samples implanted with a low oxygen dose.<
>