Sampling circuit on silicon substrate for frequencies beyond 50 GHz

We have fabricated and measured a sampling circuit on high resistivity silicon substrate. The circuit incorporates a nonlinear transmission line to provide the sampling pulses. The sampling circuit was measured up to 50 GHz, with a voltage conversion loss lower than 11 dB and varying in this range by just 2.3 dB. This is the first presentation of a sampling circuit on silicon substrate with a corner frequency beyond 50 GHz.