A 6.5-mW receiver front-end for Bluetooth in 0.18-/spl mu/m CMOS

This paper describes the design of a low-IF receiver front-end for Bluetooth fabricated in a 0.18 /spl mu/m CMOS technology. The chip includes an LNA and an image-reject mixer and provides a down-conversion gain to the 2 MHz IF of 21.4 dB, an image rejection of 28 dB and a NF of 13.9 dB consuming only 6.5 mW at 1.8 V.