W-CDMA SiGe TX-IC with high dynamic range and high power control accuracy

This paper demonstrates the SiGe TX-IC for W-CDMA mobile terminals. For the TX-IC, a novel architecture of a variable gain amplifier is proposed to improve dynamic range and power control accuracy. With the 0.5 /spl mu/m SiGe BiCMOS technology, this TX-IC achieved over 100 dB dynamic ranges within /spl plusmn/1.5dB accuracy over all temperatures. Output power of 7 dBm can be achieved by employment of P-MOSFET current mirror type self bias control circuit for the driver amplifier. Measurement results also satisfy the specification defined by 3GPP.