10 A, 2.4 kV Power DiMOSFETs in 4H-SiC

We report the characteristics of large area (3.3 /spl times/ 3.3 mm/sup 2/) high-voltage 4H-SiC DiMOSFETs. The MOSFETs show a peak MOS channel mobility of 22 cm/sup 2//V/spl middot/s and a threshold voltage of 8.5 V at room temperature. The DiMOSFETs exhibit an on-resistance of 4.2 m/spl Omega//spl middot/cm/sup 2/ at room temperature and 85 m/spl Omega//spl middot/cm/sup 2/ at 200/spl deg/C. Stable avalanche characteristics at approximately 2.4 kV are observed. An on-current of 10 A is measured on a 0.103 cm/sup 2/ device. High switching speed is also demonstrated. This suggests that the devices are capable of high-voltage, high-frequency, low-loss switching applications.