Nature of hot carrier damage in spacer oxide of LDD n-MOSFETs

The nature of hot carrier degradation of spacer oxide in LDD n-channel MOSFETs with stress time of the order of microseconds is investigated. It is seen that, under V/sub g//spl sim/V/sub t/ and I/sub submax/ stress conditions, the damage is caused by interface state generation. Under the V/sub g/=V/sub d/ condition, the damage is attributed to two different interface generation mechanisms with some contribution from electron trapping.