Functions of parameter distribution at the film evaporation in nanoelectronics

For the development of nanoelectronic devices it is important to ensure uniformity in the alloyed atoms concentration distribution under equal energy conditions of the film embryo. In real conditions of molecular-beam epitaxy from several vaporizers, when the evaporation temperature is the vapour pressure /spl sim/1 Pa, and pressure of residual gases is 10/sup -6/-10/sup -8/ Pa, the vapour generation differs from the classical equiprobable law and is carried out on the functional law. The indicated functions permit us to simulate the distribution law for film thickness on a substrate and to correct the mass transfer for a change of system parameters. The analysis of received results shows the accuracy of the chosen approach for synthesis of films by molecular-beam epitaxy method on gallium arsenide substrates.