A picosecond photodetector on SOI structures for 0.4 /spl mu/m band

We describe the characteristics of a Schottky diode of Sm on p-Si, and then the photodetector characteristics including the dark and photo current and the temporal response to picosecond light pulses. Interdigital electrodes in the detecting area of about 50 /spl mu/m square showed a dark current of about 1 nA and a responsivity of 0.1 A/W at 488 nm wavelength. The response to picosecond light pulses at 395 nm exhibited an FWHM of about 50 ps at the bias of 10 V.