Testing for coupled cells in random-access memories

Two test strategies for memory testing are compared for their ability to detect coupled-cell faults in an n-word-by-1-bit random access memory. In both strategies the data-in line is randomly driven. One of the two strategies uses random selection of both the address lines and the read/write control. The other strategy sequentially cycles through the address space with deterministic setting of the read/write control. The relative merit of the two strategies is measured by the average number of accesses per address needed to meet a standard test quality level.<>