Effect of Channel Doping and Fin Shapes on Performance of Junctionless Bulk FinFET

The impact of two different fin cross-sectional shape on the performance of Silicon junctionless bulk FinFET was investigated through TCAD simulations at different channel doping concentrations. Different electrical performance parameters have been evaluated using ATLAS 3D device simulator by calculating different figure-of-merits metrics i.e., transconductance (gm), threshold voltage (Vth), cut-off Frequency (fT). Digital performance parameters such as, the variation of on-off-current ratio (ION/IOFF) have also been analyzed. Looking into this analysis it is witnessed that triangular fin shaped channels are not so sensitive with respect to variation in different channel doping level. It is also seen that the electrical characteristics of junctionless transistors having higher doping level are more susceptible to change in fin cross-sectional shape.