MOVPE InP based material for millimeter and submillimeter wave generation and amplification

The potential of the MOVPE growth process for millimeter and submillimeter wave generation and amplification is presented. The increase in layer quality, the improved homogeneity and purity, the precision of mono-layers growth and wide spectrum III-V compounds makes MOVPE techniques very attractive for modern device applications. The characterisation results of the heterostructures dedicated for HBVs (heterostructure barrier varactors) and 2-DEG transistors (HEMT) are described.