Comprehensive analytical charge control and I-V model of modern MOSFET's by fully comprising quantum mechanical effects

A new analytical charge control and I-V model for sub-micron and deep sub-micron MOSFETs is developed based on a newly developed charge control model in a MOS structure. Threshold voltage shift due to quantum mechanical effects (QMEs), finite inversion layer thickness effect (inversion layer capacitance) as well as increased depletion layer charge density after the strong inversion point are used cooperatively in the model.