Research on ultra-low RDSON wafer measurement

With the rapid development of the automotive electronics and industrial application, power device technology attracts more and more researchers' eyesight [1][2]. Meanwhile, the smaller the chip size becomes, the lower the key parameter which is named as R
_DSON
will be. Lower RDSON affects not only the system stability but also the power consumption. Therefore, it is crucial that the high measurement accuracy of this key parameter should be captured. Several test approaches which use floating GND (Ground) instrument are analyzed and compared on RDSON measurement in this paper. One test approach is proposed that the ultra-low R
_DSON
could be previously detected without complex connection.