Silver sintering die attachment for power chip in power module

Higher operation temperature and high current density requests of new generation power devices make it is more and more complicated to meet the quality requirements for power electronic modules. Especially the (silicon carbide) SiC and gallium nitride (GaN) power device lead to the maximum operation temperature more than 200°C. Solder should be an issue for die bond material, and silver sintering material can satisfy the demands of power modules in the future. Silver sintering can be the candidate to be substituted for solder in the power device die attachment. This paper presents a comparison of solder and silver bonding material from thermal, electric, and power cycle reliability points of view. The thermal resistance of IGBT chip bonding with silver sintering is 15~20% lower than with SAC305. The silver sintering can improve the thermal dissipation; and the surge current of the power diode bonding with silver sintering can enhance over 25% than with SAC solder. Furthermore, power cycle test is an important index of power module reliabilities. In power cycle tests, the IGBT bonding with silver sintering can increase 160% life cycle than with SAC solder. Silver sintering technology could improve not only thermal performance, but also reliability of power modules.