Characteristics of Er/sup 3+/:Al/sub 2/O/sub 3/ thin-films deposited by reactive co-sputtering for application in optical amplification

Er/sup 3+/-doped Al/sub 2/O/sub 3/ films have been deposited by reactive co-sputtering onto thermally oxidized Si-wafers for use in optical amplification. Low background losses and broad emission band were measured. High concentration and gain can be achieved.