Improvements to a compact MOSFET model for design by hand

In this work, an improved version of the basic structure of a compact MOSFET model and the respective parameters extraction methodology are proposed. The aim of this approach is to increase accuracy in hand calculations for analog circuit design without significantly increasing its complexity. The influences of both inversion level and channel length are considered in the modeling of a few features such as mobility, threshold voltage and onset of saturation. Simple design examples of current sinks and sources are accomplished to compare the basic and the improved models.