Evaluation of a C-band rectifier using Si substrate for HySIC application

This paper demonstrates fundamental evaluation results of a C-band rectifier using Si substrate for HySIC application. Usage of the Si substrate is attractive for future integration with other mixed signal circuit. Because of large loss tangent of the Si substrate, applicability as a circuit substrate to the C-band rectifier is discussed. Two types of the rectifier, conventional printed circuit board and the Si substrate, are designed and fabricated. Maximum rectification efficiency of 10.4% at 5.39 GHz while the load resistance is 20 Ω is obtained from the measurement.