Unified deep-submicron MOSFET model for circuit simulation

In this paper, a new model for deep-submicrometer MOSFETs is developed, which includes various second-order physical effects in the operations of deep-submicrometer MOSFET's. In the model, a unified formula is used to describe all the operation regions, which keeps the model C/sub /spl infin//-continuous. The model is suitable for both digital and analog MOS circuit simulations. A good fitting has been achieved between the model and experiment data.