Silicon carbide thin films deposited by PECVD technology for applications in photoelectrochemical water splitting devices

Amorphous silicon carbide films were prepared by PECVD technology on Si substrate with the aim to use SiC films in the technology of photoelectrochemical water splitting devices. Concentration of elements in the films was determined by RBS and ERD method. FTIR, Raman and I-V measurement were used before and after immersion of samples to aqueous sulfuric acid electrolyte. Differences between Raman or FTIR spectra and differences between I-V characteristics before and after immersion to electrolyte are discussed.