Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process

The issue of gate metallization stability on AlGaN/GaN heterostructure during the diamond deposition process has been studied. Among tested Ni, Ir, NiO and IrO
2
materials the iridium-based has the most promising characteristic to be used. The diamond growth in focused microwave plasma system on tran­sistors with Ir and IrO
2
Schottky contact metallization has been demonstrated and discussed.