Study of negative electron beam nanoresist HSQ on GaAs substrate

The aim of this paper is to characterize Hydrogen Silsesquioxane (HSQ) inorganic negative electron resist on GaAs substrate at 40 keV electron energy. The influence of process parameters on resist profiles was investigated with the aim of obtaining vertical sidewalls. The values of the proximity effect function parameters (β
_f
, β
_b
and η
_E
) were calculated using Monte Carlo approach. Observation of HSQ resist profiles were done for a set of linewidth dimensions.