Magnetic Properties of Materials for MRAM

This chapter reviews the main materials used in magnetic random‐access memory and their properties. It explains the basic concepts of practical magnetic tunnel junctions, including ferromagnets, antiferromagnets, magnetic anisotropy, exchange bias, interlayer exchange coupling, and synthetic antiferromagnetic structures. The chapter covers the magnetotransport properties of giant magnetoresistive multilayers as well as of magnetic tunnel junctions with either an amorphous aluminum oxide or a crystalline magnesium oxide tunnel barrier
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