A surface potential large signal model for AlGaN/GaN HEMTs

This paper presents an accurate analytical surface-potential-based compact model for AlGaN/GaN HEMTs for SPICE-like circuit simulation. Considering the important energy level E
₀
, an easy-implemented analytical continuous expression for the fermi level position Ef was deduced to obtain the surface potential(SP) φs. Then analytical core models for intrinsic charge and drain current are derived based on φs. The model has been implemented in Agilent ADS by using symbolic defined device. Excellent agreement of DC I-V, fundamental output power, power added efficiency and gain is obtained for the first time compared with measurement results. Moreover, the effect of physical parameter such as the barrier thickness d on device characteristic is researched on the basic of this model. The results show that the proposed physical based model can be useful for technological parameters analysis and optimization of process.