The influence of Xe-Ions irradiation on c-Si/a-SiC photovoltaic device

Amorphous silicon carbide in various forms, thin films or bulk structures, is a longer period used in microelectronics, power electronics, sensors and mechanical engineering. Thin films of n-doped amorphous silicon carbide (a-SiC:H) in combination with crystalline silicon representing heterostructure for the solar cells were object of this study. DC and AC measurements and subsequent analyzes were used to estimate the impact of Xe irradiation on electrical properties of studied heterostructure. Impact of Xe irradiation has been quantified by using AC equivalent circuit and the corresponding voltage dependence of AC equivalent circuit elements. The influence of Xe-ions bombardment of a-SiC:H/c-Si heterostructure which resulted in the changes of elements of equivalent circuit — parallel resistance and capacitance — have been identified and explained.