Basic principles of chemical vapor deposition technique at atmospheric pressure for synthesis of cadmium telluride and its implementation as diode

This paper is focused on the study of basic principles of a chemical vapor deposition technique. Already established the theoretical deposition parameters, we obtain cadmium telluride film at different temperatures over silicon and glass substrates. It was found that the structural and electrical properties are greatly influenced by the substrate and sources temperature: the grain size increasing with the deposition temperature as well as the chemical composition. The films were placed at thermal treatment at 500°C in a tellurium/argon atmosphere in order to increase the tellurium composition on the film. We study the heterojunction formed between CdTe p-type / Si n-type.