AlAsSb-based distributed Bragg reflectors for 1.55 /spl mu/m VCSELs using InAlGaAs as high-index layer

Summary form only given. Arsenide-antimonide mixed group-V compounds are very attractive as materials for AlAsSb distributed Bragg reflectors (DBRs). Grown lattice-matched on InP, such DBRs, thanks primarily to the low refractive index of AlAsSb, would allow the monolithic growth of long-wavelength vertical cavity surface emitting lasers (VCSELs) with relatively few periods compared to traditional InP-InGaAsP DBRs.