300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique

This paper proposes an improved cold-bias de-embedding technique that properly separates the bias-independent parasitics from the bias-dependent core MOSFET characteristics. This is accomplished by considering possible discrepancy between dc and high-frequency I-V characteristics. It makes the core MOSFET model very simple. A 32-μm-wide common-source MOSFET fabricated in a 65 nm LP CMOS process is successfully modeled up to 330 GHz.