1.7kV high-power IGBT fabrication by bonded-wafer-concept

Lower losses and higher performance levels at elevated junction temperatures require fabrication processes enabling full design-flexibility for the IGBT buffer and anode to meet application requirements for the ≤1.7kV voltage-range. Here we present the bonded wafer concept that is enabling high thermal stability and soft and high turn-off capability due to full design flexibility for the critical backside layers.