Ab-Initio Simulation of van der Waals MoTe2–SnS2 Heterotunneling FETs for Low-Power Electronics

Band-to-band tunneling field-effect transistors (TFETs) made of a vertical heterojunction of single-layer MoTe
₂
and SnS
₂
are investigated by means of 3-D, full-band, atomistic quantum-transport simulations relying on a first-principles basis. At a supply voltage V
_dd
= 0.4 V and OFF-current IOFF = 10
^-6
μA/μm, ON-state currents >75 μA/μm are reported for both n- and p-type logic switches. Our findings indicate that metal-dichalcogenide heterojunction TFETs represent a viable option in low-power electronics.