A 1TnR array architecture using a one-dimensional selection device

Phase-change memory (PCM) cells on a single carbon nanotube field-effect transistor (CNFET) are demonstrated toward the realization of the 1TnR array architecture. The use of CNFET as one-dimensional selector, which exhibits ultra-low leakage (< 1 pA) and large ON/OFF ratio (> 10
⁶
) at high current densities, enables the cost-effective PCM cell to operate with a wide voltage margin in large 2D arrays. Uniform electrical characteristics of PCM cells over 100 cycles are obtained with the ON/OFF ratio of ∼ 100 and the low SET/RESET currents of < 1 µA.